npn ty general purpose transistors maximum ratings rating symbol max unit collector-emitter voltage v ceo 25 v collector-base voltage v cbo 40 v emitter-base voltage v ebo 5v collector current-continuoun i c 1500 madc thermal characteristics characteristic symbol max unit total device dissipation fr-5 board,(1) p d t a =25c 225 mw derate above 25c 1.8 mw/c thermal resistance,junction to ambient r ja 556 c/w total device dissipation p d alumina substrate,(2) ta=25c 300 mw derate above 25c 2.4 mw/c thermal resistance,junction to ambient r ja 417 c/w junction and storage temperature t j, t s t g -55 to +150 c l8050h*lt1 1 3 2 sot?23 1 base 2 emitter collector 3 feature ? high current capacity in compact package. i c =1.5a. ? epitaxial planar type. ? pnp complement: l8550h ? pb-free package is available. device marking and ordering information device marking L8050HPLT1 1ha L8050HPLT1g 1ha (pb-free) l8050hqlt1 1hc l8050hqlt1g 1hc (pb-free) 3000/tape&reel shipping 3000/tape&reel 3000/tape&reel 3000/tape&reel product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-emitter breakdown voltage v (br)ceo 25 ?? v (i c =1.0ma) emitter-base breakdown voltage v (br)ebo 5 ?? v (i e =100 ? ) collector-base breakdown voltage v (br)cbo 40 ?? v (i c =100 ? ) collector cutoff current (v cb =35v) i cbo ? ? 150 na emitter cutoff current (v eb =4v) i ebo ? ? 150 na dc current gain i c =100ma,v ce =1v h fe 120 - 600 collector-emitter saturation voltage (i c =800ma i b =80ma) v ce(s) - - 0.5 note : * pqrs h fe 120~200 150~300 200~400 300~600 electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min typ max unit on characteristics v l8050h*lt1 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 l8050h*lt1 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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